厚胶光刻非线性畸变的校正

利用厚胶光刻技术制作大深度微结构元件是一种有效的途径,但厚胶光刻过程中的非线性畸变对光刻面形质量的严重影响限制了该技术的应用,基于此,提出了一种对掩模透射率函数进行校正的方法。分析空间像形成及其在光刻胶内传递、曝光、显影等过程中非线性因素的影响,利用模拟退火算法对掩模透射率函数进行校正,以提高光刻面形质量,并以凹面柱透镜为例,给出了校正前后的显影轮廓模拟结果,其校正后浮雕面形的体积偏差仅为2.63%。该方法在有效改善面形质量的同时,并没有引起掩模的设计、制作难度及费用增加,这对于设计、制作高质量的微结构元件有重要意义。     

Quantum HeisenbergS=1/2 spin glass with ferromagnetic coupling and random Dzyaloshinskii-Moriya interactions

By means of the generalized static replica symmetric spin glass theory, a quantum HeisenbergS=1/2 spin glass model with the infinite-ranged random Dzyaloshinskii-Moriya (DM) interaction and ferromagnetic coupling is investigated. The dependence of entropy, specific heat, susceptibility and the corresponding order parameters on temperature is studied numerically for different ferromagnetic interactions and fixed anisotropy. Two spin glass phases has been found including transverse and mixed spin glass phases. It has been shown that the local susceptibility exhibits double-cusp features for different ferromagnetic coupling (J ₀). Phase transition poins are found in the specific heat-temperature plane at various ferromagnetic coupling values. Additionally, the dependence of the spontaneous moment on temperature is calculated.     

双电荷交换反应与双重子共振态

提出了核双电荷交换反应的双重子共振态的反应机制,成功地解释了长期以来一直困惑着人们的共振区反应的角分布的实验结果.说明了共振区核双电荷交换反应是寻找双重子共振态的一个可能的途径.     

PIXE analysis of the Mn-doped content in Ga1-xMnxN film grown by LP-MOVPE

Summary Department of Technical Physics, School of Physics, Peking Unive     

~n中有界域上全纯函数的第Ⅰ型 C-F公式

本文得到Ｃｎ中有界域上全纯函数的一种其积分密度函数含有全纯函数导数的 Ｃａｕｃｈｙ－Ｆａｎｔａｐｐｉ　　公式，称之为第Ⅰ型 Ｃ－Ｆ 公式，利用这个公式，通过适当选择其中的向量函数，可以得到许多区域上全纯函数相应的第Ⅰ型积分表示式．     

Low-threshold, high-efficiency, high-repetition-rate optical parametric generator based on periodically poled LiNbO3

We report a high-repetition-rate optical parametric generator (OPG) with a periodically poled lithium niobate (PPLN) crystal pumped by an acousto-optically Q-switched CW-diode-end-pumped Nd:YVO_4 laser. For the maximum 1064nm pump power of 970mW, the maximum conversion efficiency is 32.9% under the conditions of 250℃, 1064nm pulse repetition rate of 22.6kHz and pulse width of 12ns, and the PPLN OPG threshold in the collinear case is less than 23.7μJ. The output power increases with the increase of the crystal temperature. The 1485－1553nm signal wave and 3383－3754nm idler wave are obtained by changing the temperature and the angle of the PPLN crystal.     

白光干涉条纹变密的原因探讨

讨论了在测定透明介质折射率的过程中彩色条纹变密的现象，并在其基础上分析其成因：一是由于媒质折射率加大；二是由于平形板介质平行度不好造成楔形的倾角变大，最后在实验中验证了理论结果。     

Reduction of dislocation density and improvement of optical quality in ZnO layers by MgO-buffer annealing

Optical properties of ZnO thin films with/without MgO-buffer annealing were investigated by low and room temperature photoluminescence measurements. The ZnO films were grown on c-sapphire substrates by plasma-assisted molecular-beam epitaxy employing a thin MgO-buffer layer. Dislocation density of ZnO layer was reduced from 5.3 × 10⁹ to 1.9 × 10⁹ cm⁻² by annealing MgO-buffer prior to the growth of ZnO. The intensity of free exciton emission from the sample with MgO-buffer annealing was almost twice of that from the sample without annealing, while the deep level emission from the sample with MgO-buffer annealing was about 1/3 of that without annealing. The MgO-buffer annealing improves optical quality of overgrown ZnO films.     

Experimental 511 W Composite Nd：YAG Ceramic Laser

We demonstrate a 511 W laser diode pumped composite Nd：YAG ceramic laser. The optical pumping system is consisted of five laser diode stacked arrays arranged in a pentagonal shape around the ceramic rod whose size is φ6.35×144mm. When the pumping power is 1600 W, the cw laser output up to 511 W at 1064nm can be obtained with a linear piano-piano cavity, and the optical-to-optical efficiency is 31.9%. To our knowledge, this is the highest value of laser output by using a newly invented composite Nd：YAG ceramic rod as the gain medium.     

Optical characterization of CdTe/ZnSe fractional monolayer structures grown by atomic layer epitaxy

Luminescence properties of CdTe/ZnSe fractional monolayer grown by atomic layer epitaxy have been investigated. To investigate the origin of the highly efficient luminescence, various optical spectroscopic methods such as, photoluminescence (PL), temporal/spatial resolved PL, temperature dependence PL, and excitation power dependence PL have been used. It is found that structural inhomogeneities affect dominant influence on the line width and line shape of luminescence. The luminescence intensity greatly enhanced by the localization of exciton at the disorder induced localized states.